Rochester Electronics TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF7769L2TRPBF IRF7769L2TRPBF

Description
Manufacturer: Infineon Technologies Win Source Part Number: 851170-IRF7769L2TRPB F Series: HEXFET® Features: 100 V Package: Bulk Categories: Discrete Semiconductor Products Popularity: Medium Fake Threat In the Open Market: 79 pct. Supply and Demand Status: Limited Quantity per package: 1
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Description
Manufacturer: Infineon Technologies Win Source Part Number: 851170-IRF7769L2TRPB F Series: HEXFET® Features: 100 V Package: Bulk Categories: Discrete Semiconductor Products Popularity: Medium Fake Threat In the Open Market: 79 pct. Supply and Demand Status: Limited Quantity per package: 1
Request a Quote
Datasheet
Datasheet Summary
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The IRF7769L2TRPBF is a DirectFET power MOSFET designed for high-frequency switching and synchronous rectification in isolated converters. It is housed in a DirectFET2 Large Can package with a profile of less than 0.7 mm and supports dual-sided cooling. The device has a drain-to-source voltage rating of 100 V, a continuous drain current of 124 A at 25°C, and a typical on-state resistance of 2.8 mΩ at 10 V gate voltage. Total gate charge is 200 nC, with a gate threshold voltage of 2.7 V. It is RoHS compliant and halogen-free, with industrial qualification per JEDEC JESD47F and moisture sensitivity level MSL1 per J-STD-020D.

Datasheet Summary
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The IRF7769L2TRPBF is a DirectFET power MOSFET designed for high-frequency switching and synchronous rectification in isolated converters. It is housed in a DirectFET2 Large Can package with a profile of less than 0.7 mm and supports dual-sided cooling. The device has a drain-to-source voltage rating of 100 V, a continuous drain current of 124 A at 25°C, and a typical on-state resistance of 2.8 mΩ at 10 V gate voltage. Total gate charge is 200 nC, with a gate threshold voltage of 2.7 V. It is RoHS compliant and halogen-free, with industrial qualification per JEDEC JESD47F and moisture sensitivity level MSL1 per J-STD-020D.

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TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF7769L2TRPBF - 851170-IRF7769L2TRPBF - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF7769L2TRPBF
851170-IRF7769L2TRPBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF7769L2TRPBF 851170-IRF7769L2TRPBF
Manufacturer: Infineon Technologies Win Source Part Number: 851170-IRF7769L2TRPB F Series: HEXFET® Features: 100 V Package: Bulk Categories: Discrete Semiconductor Products Popularity: Medium Fake Threat In the Open Market: 79 pct. Supply and Demand Status: Limited Quantity per package: 1

Manufacturer: Infineon Technologies
Win Source Part Number: 851170-IRF7769L2TRPBF
Series: HEXFET®
Features: 100 V
Package: Bulk
Categories: Discrete Semiconductor Products
Popularity: Medium
Fake Threat In the Open Market: 79 pct.
Supply and Demand Status: Limited
Quantity per package: 1

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Technical Specifications

  Win Source Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 851170-IRF7769L2TRPBF
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF7769L2TRPBF
Package Type SOT3
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