Rochester Electronics TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF1405SPBF IRF1405SPBF

The IRF1405SPBF is an N-channel MOSFET designed for high-current switching applications such as industrial motor drives. It features a D2Pak (TO-263-3) surface mount package with dimensions conforming to EIA-418. The device has a drain-to-source breakdown voltage of 55 V, a continuous drain current of 131 A at 25°C, and an on-resistance of 4.6 to 5.3 mΩ at 10 V gate drive. It supports a maximum junction temperature of 175°C, has a repetitive avalanche energy rating limited by junction temperature, and a peak diode recovery dv/dt of 5.0 V/ns. The total gate charge is 170 to 260 nC, and it includes an integrated body diode with a forward voltage of 1.3 V at 101 A. Thermal resistance from junction to case is 0.75 °C/W.