The IPS65R650CE is a 650V CoolMOS™ CE N-channel MOSFET designed for cost-sensitive consumer and lighting applications, featuring low losses and high commutation ruggedness. It is packaged in a PG-TO251-3 case, also known as IPAK, with a through-hole mounting style. The device has a maximum continuous drain current of 10.1A at TC=25°C and a pulse drain current rating of 18A. It supports a maximum junction temperature of 150°C and a maximum power dissipation of 86W at TC=25°C. The gate-source voltage is rated from -20V to +20V static. The MOSFET meets the standard grade qualification and complies with Pb-free plating and halogen-free mold compound requirements.
Manufacturer: Infineon Technologies
Win Source Part Number: 874874-IPS65R650CEAK
Operating Temperature Range: -40°C ~ 150°C (TJ)
Features: N-Channel 700 V 10.1A (Tc) 86W (Tc) Through Hole PG-TO251-3
Package: Bulk
Package: TO-251-3 Short Leads, IPak, TO-251AA
Mounting: Through Hole
Categories: Discrete Semiconductor Products
Case / Package: PG-TO251-3
Popularity: Medium
Fake Threat In the Open Market: 49 pct.
Supply and Demand Status: Limited
Quantity per package: 1
| Win Source Electronics | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 874874-IPS65R650CEAKMA1 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPS65R650CEAKMA1 |
| Polarity | N-Channel |
