Rochester Electronics TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPP80R900P7 IPP80R900P7

The IPP80R900P7 is an 800V CoolMOS™ P7 power MOSFET designed for hard and soft switching applications in LED lighting, low-power chargers, audio, auxiliary power, and industrial power systems. It is packaged in a PG-TO-220-3 case with dimensions of 14.81 to 15.95 mm in length, 9.70 to 10.36 mm in width, and 4.30 to 4.57 mm in height. The device features a maximum drain-source on-state resistance of 0.90 Ω, a gate threshold voltage of 3 V, and integrates an ESD protection zener diode. It supports a continuous drain current of 6 A at 25°C and a pulsed drain current of 14 A. The MOSFET is fully qualified according to JEDEC standards for industrial applications and offers a thermal resistance from junction to case of 2.8 °C/W. It meets JEDEC and is rated for operating temperatures from -55°C to 150°C.