Rochester Electronics TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPP65R225C7 IPP65R225C7

The IPP65R225C7 is a 650V CoolMOS™ C7 power transistor designed for high-efficiency switching applications such as PFC and hard-switching PWM stages in computing, server, telecom, UPS, and solar systems. It is packaged in a PG-TO-220 case with a maximum drain-source breakdown voltage of 650V, a maximum on-state resistance of 225 mΩ, and a pulsed drain current of 41 A. The device features a gate charge of 20 nC and an avalanche energy rating of 48 mJ. It is qualified for industrial-grade applications according to JEDEC standards J-STD-002 and JESD22, and meets RoHS requirements with Pb-free plating and halogen-free mold compound. The thermal resistance from junction to case is 1.99 °C/W, and the operating junction temperature ranges from -55°C to 150°C.