The IPI90R800C3 is a 900 V N-channel CoolMOS™ power transistor designed for quasi-resonant flyback and industrial SMPS applications. It is packaged in a PG-TO262 case with a continuous drain current rating of 6.9 A at 25°C and a power dissipation of 104 W. The device has a typical on-state resistance of 0.8 Ω at 25°C and a gate charge of 42 nC. It features extreme dv/dt ruggedness up to 50 V/ns and is qualified to JEDEC standards. The package dimensions are defined by the PG-TO262 outline, and it is RoHS compliant with Pb-free plating.
Manufacturer: Infineon Technologies
Win Source Part Number: 874807-IPI90R800C3
Series: CoolMOS™
Operating Temperature Range: -55°C ~ 150°C (TJ)
Features: N-Channel 900 V 6.9A (Tc) 104W (Tc) Through Hole PG-TO262-3
Package: Bulk
Package: TO-262-3 Long Leads, I2Pak, TO-262AA
Mounting: Through Hole
Part Status: Obsolete
Categories: Discrete Semiconductor Products
Case / Package: PG-TO262-3
ECCN: EAR99
Popularity: Medium
Fake Threat In the Open Market: 42 pct.
Supply and Demand Status: Limited
Quantity per package: 1
HTSUS: 8541.29.0095
| Win Source Electronics | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 874807-IPI90R800C3 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPI90R800C3 |
| Polarity | N-Channel |
