Rochester Electronics Specialized ICs - IPA80R1K4P7 IPA80R1K4P7

The IPA80R1K4P7 is an 800V CoolMOS™ P7 power MOSFET designed for hard and soft switching applications in LED lighting, low-power chargers, audio, auxiliary power, and industrial power systems. It is packaged in a PG-TO-220 FullPAK with dimensions of 15.67-16.15 mm in length, 10.00-10.65 mm in width, and 28.70-29.75 mm in height. The device has a maximum drain-source on-state resistance of 1.4 Ω at 25°C, a gate threshold voltage of 3 V, and integrates an ESD protection zener diode. It supports a continuous drain current of 4 A at 25°C case temperature and 2.7 A at 150°C, with a peak pulsed drain current of 8.9 A. The MOSFET is fully qualified according to JEDEC for industrial applications.