Rochester Electronics Specialized ICs IPA60R125P6

The IPA60R125P6 is a 600V CoolMOS,Ñ¢ P6 power transistor designed for high-voltage applications. It utilizes superjunction (SJ) technology, which enhances efficiency through low switching and conduction losses. The device features a maximum drain-source voltage (VDS) of 650V and a maximum on-resistance (RDS(on)) of 125 mOc. It has a typical gate charge (Qg) of 56 nC and can handle pulse currents up to 87A. The transistor is suitable for various applications, including power factor correction (PFC) stages, hard-switching PWM stages, and resonant switching stages in devices such as adapters, TVs, and servers. The IPA60R125P6 is packaged in a TO-220 format and is qualified for industrial-grade applications according to JEDEC standards.