The HUF75617D3 is a 100V, 16A N-channel UltraFET™ power MOSFET in a TO-251AA package for switching applications. It has a maximum drain-to-source on-resistance of 0.090 Ω at Vₒₓ = 10V and 16A, a continuous drain current of 16A at TC = 25°C, and a power dissipation of 64W. The thermal resistance from junction to case is 2.34 °C/W. Operating and storage junction temperatures range from -55°C to 175°C. The device includes temperature-compensa
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 874008-HUF75617D3
Series: UltraFET™
Operating Temperature Range: -55°C ~ 175°C (TJ)
Features: N-Channel 100 V 16A (Tc) 64W (Tc) Through Hole I-PAK
Package: Tube
Package: TO-251-3 Short Leads, IPak, TO-251AA
Mounting: Through Hole
Part Status: Obsolete
Categories: Discrete Semiconductor Products
Case / Package: I-Pak
ECCN: EAR99
Popularity: Medium
Fake Threat In the Open Market: 40 pct.
Supply and Demand Status: Limited
Quantity per package: 75
HTSUS: 8541.29.0095
| Win Source Electronics | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 874008-HUF75617D3 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - HUF75617D3 |
| Polarity | N-Channel |
