Rochester Electronics TRANSISTORS - Transistors (BJT) - Arrays - HN1B01FDW1T1 HN1B01FDW1T1

The HN1B01FDW1T1 is a complementary dual general purpose amplifier transistor integrating PNP and NPN bipolar junction transistors in a surface mount SC-74 package. It has a collector-emitter voltage rating of 50 V, collector current of 200 mA, and power dissipation of 380 mW. The DC current gain (hFE) ranges from 200 to 400 at a collector current of 2.0 mA and collector-emitter voltage of 6.0 V. The collector-emitter saturation voltage is 0.15 V to 0.3 V for the PNP and 0.15 V to 0.25 V for the NPN at 100 mA collector current and 10 mA base current. The device meets moisture sensitivity level 1 and human body model ESD rating of 3A. The junction temperature range is -55°C to +150°C, and the package dimensions conform to SC-74 case style 318F-05.