Rochester Electronics TRANSISTORS - Transistors - FETs, MOSFETs - RF - FS70UMJ-06F FS70UMJ-06F

FS70UMJ-06F is an N-channel power MOSFET designed for high-speed switching applications such as motor, lamp, and solenoid control, and DC-DC converters. It is packaged in a TO-220 case with a mass of 2.0 g. The device has a drain-source voltage rating of 60 V, a continuous drain current of 70 A, and a maximum on-state resistance of 7.0 mΩ at 25°C. It includes an integrated fast recovery diode with a typical recovery time of 70 ns. The gate-source voltage is rated at ±20 V, and the maximum power dissipation is 125 W. The operating and storage junction temperature range is from -55°C to +150°C.