Rochester Electronics TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDME430NT FDME430NT

The FDME430NT is an N-Channel MOSFET designed for load switching, DC-DC conversion, and battery management applications, fabricated using Fairchild's PowerTrench® process. It comes in a MicroFET 1.6x1.6 Thin surface-mount package with a maximum height of 0.55 mm. The device has a drain-to-source voltage rating of 30 V and a continuous drain current of 6 A at 25 °C. Its on-resistance is 40 mΩ maximum at VGS = 4.5 V and ID = 6 A, and 51 mΩ maximum at VGS = 2.5 V and ID = 5 A. Thermal resistance from junction to ambient is 60 °C/W on a 1 in² 2 oz copper pad. The part is RoHS compliant, halogen-free, and operates with a junction temperature range of -55 °C to +150 °C.