Rochester Electronics TRANSISTORS - Transistors - FETs, MOSFETs - RF - FCH099N60E FCH099N60E

The FCH099N60E is an N-channel SuperFET II Easy-Drive MOSFET designed for high-voltage switching applications such as telecom and industrial power supplies. It is packaged in a TO-247-3 case with a maximum drain-to-source voltage of 600 V and a continuous drain current of 37 A at 25°C. The device has a maximum on-resistance of 99 mΩ at 10 V gate drive, a total gate charge of 114 nC, and a typical effective output capacitance of 309 pF. It supports avalanche energy up to 809 mJ and is rated for junction and storage temperatures from -55°C to 150°C. Thermal resistance from junction to case is 0.35°C/W. The part is RoHS compliant and 100% avalanche tested. The Easy-Drive variant features slower switching speeds to aid EMI management.