Rochester Electronics TRANSISTORS - Transistors - FETs, MOSFETs - RF - FCH041N65EFL4 FCH041N65EFL4

The FCH041N65EFL4 is an N-channel SuperFET II FRFET MOSFET designed for high-voltage switching applications such as PFC, server power, and AC-DC converters. It is packaged in a TO-247-4 case with a maximum drain-source voltage of 650 V, a continuous drain current of 76 A at 25°C, and a maximum power dissipation of 595 W. The device features a typical on-resistance of 36 mΩ, a total gate charge of 229 nC, and an effective output capacitance of 631 pF. It includes avalanche protection with a single pulsed avalanche energy rating of 2025 mJ and is RoHS compliant. Thermal resistance from junction to case is 0.21 °C/W, and the operating and storage temperature range is -55°C to +150°C. The part is mounted through-hole and is structured with a Kelvin source for improved switching performance.