Rochester Electronics TRANSISTORS - Transistors - FETs, MOSFETs - RF - EFC6604R-TR EFC6604R-TR

Description
Manufacturer: ON Semiconductor Win Source Part Number: 870182-EFC6604R-TR Operating Temperature Range: 150°C (TJ) Features: Mosfet Array 2 N-Channel (Dual) - - 1.6W Surface Mount 6-EFCP (1.9x1.46) Package: Bulk Package: 6-XFBGA Mounting: Surface Mount Categories: Discrete Semiconductor Products Case / Package: 6-EFCP (1.9x1.46) Popularity: Medium Fake Threat In the Open Market: 86 pct. Supply and Demand Status: Limited Quantity per package: 1
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Description
Manufacturer: ON Semiconductor Win Source Part Number: 870182-EFC6604R-TR Operating Temperature Range: 150°C (TJ) Features: Mosfet Array 2 N-Channel (Dual) - - 1.6W Surface Mount 6-EFCP (1.9x1.46) Package: Bulk Package: 6-XFBGA Mounting: Surface Mount Categories: Discrete Semiconductor Products Case / Package: 6-EFCP (1.9x1.46) Popularity: Medium Fake Threat In the Open Market: 86 pct. Supply and Demand Status: Limited Quantity per package: 1
Request a Quote
Datasheet
Datasheet Summary
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The EFC6604R-TR is a dual N-channel power MOSFET in a 6-EFCP (1.91x1.46 mm) WLCSP package, designed for 1-cell lithium-ion battery protection circuits. It features a maximum source-to-source voltage of 12 V, continuous source current of 13 A, and on-state resistance of 9.0 mΩ at 4.5 V gate drive. The device supports 2.5 V gate drive, includes an ESD-protected gate, and is RoHS compliant. Thermal resistance is 78.1 °C/W when surface-mounted on a 5000 mm² ceramic substrate. The package is supplied in tape and reel for automated assembly.

Datasheet Summary
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The EFC6604R-TR is a dual N-channel power MOSFET in a 6-EFCP (1.91x1.46 mm) WLCSP package, designed for 1-cell lithium-ion battery protection circuits. It features a maximum source-to-source voltage of 12 V, continuous source current of 13 A, and on-state resistance of 9.0 mΩ at 4.5 V gate drive. The device supports 2.5 V gate drive, includes an ESD-protected gate, and is RoHS compliant. Thermal resistance is 78.1 °C/W when surface-mounted on a 5000 mm² ceramic substrate. The package is supplied in tape and reel for automated assembly.

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TRANSISTORS - Transistors - FETs, MOSFETs - RF - EFC6604R-TR - 870182-EFC6604R-TR - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - EFC6604R-TR
870182-EFC6604R-TR
TRANSISTORS - Transistors - FETs, MOSFETs - RF - EFC6604R-TR 870182-EFC6604R-TR
Manufacturer: ON Semiconductor Win Source Part Number: 870182-EFC6604R-TR Operating Temperature Range: 150°C (TJ) Features: Mosfet Array 2 N-Channel (Dual) - - 1.6W Surface Mount 6-EFCP (1.9x1.46) Package: Bulk Package: 6-XFBGA Mounting: Surface Mount Categories: Discrete Semiconductor Products Case / Package: 6-EFCP (1.9x1.46) Popularity: Medium Fake Threat In the Open Market: 86 pct. Supply and Demand Status: Limited Quantity per package: 1

Manufacturer: ON Semiconductor
Win Source Part Number: 870182-EFC6604R-TR
Operating Temperature Range: 150°C (TJ)
Features: Mosfet Array 2 N-Channel (Dual) - - 1.6W Surface Mount 6-EFCP (1.9x1.46)
Package: Bulk
Package: 6-XFBGA
Mounting: Surface Mount
Categories: Discrete Semiconductor Products
Case / Package: 6-EFCP (1.9x1.46)
Popularity: Medium
Fake Threat In the Open Market: 86 pct.
Supply and Demand Status: Limited
Quantity per package: 1

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Technical Specifications

  Win Source Electronics
Product Category RF Transistors
Product Number 870182-EFC6604R-TR
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - EFC6604R-TR
Polarity N-Channel
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