Rochester Electronics TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - DTC124EM3T5G DTC124EM3T5G

The DTC124EM3T5G is an NPN digital transistor with integrated bias resistors (R1 = 22 kΩ, R2 = 22 kΩ) designed to replace discrete transistor-resistor networks, reducing component count and board space. It is packaged in SOT-723, measuring 1.25 mm × 0.85 mm × 0.60 mm, and rated for a collector current of 100 mA and a collector-emitter voltage of 50 V. The device dissipates up to 260 mW at 25°C with a derating of 2.0 mW/°C and has a junction-to-ambient thermal resistance of 480 °C/W. The junction and storage temperature range is −55 °C to +150 °C. It is RoHS compliant, Pb-free, halogen-free, and AEC-Q101 qualified. DC current gain ranges from 60 to 100 at IC = 5.0 mA and VCE = 10 V, with collector-emitter saturation voltage ≤ 0.25 V at IC = 10 mA and IB = 0.3 mA.