Rochester Electronics TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - DTA124EET1G DTA124EET1G

Description
Manufacturer: ON Semiconductor Win Source Part Number: 917709-DTA124EET1G Features: Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 100 mA 200 mW Surface Mount SC-75, SOT-416 Package: SC-75, SOT-416 Package: Bulk Mounting: Surface Mount Categories: Discrete Semiconductor Products Case / Package: SC-75, SOT-416 Popularity: High Fake Threat In the Open Market: 73 pct. Supply and Demand Status: Balance Quantity per package: 1
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Description
Manufacturer: ON Semiconductor Win Source Part Number: 917709-DTA124EET1G Features: Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 100 mA 200 mW Surface Mount SC-75, SOT-416 Package: SC-75, SOT-416 Package: Bulk Mounting: Surface Mount Categories: Discrete Semiconductor Products Case / Package: SC-75, SOT-416 Popularity: High Fake Threat In the Open Market: 73 pct. Supply and Demand Status: Balance Quantity per package: 1
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Datasheet
Datasheet Summary
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DTA124EET1G is a PNP digital transistor with integrated bias resistors, designed to replace discrete transistor-resistor networks and reduce board space. It is packaged in SC-75 (SOT-416) and operates with a maximum collector-emitter voltage of 50 V and a continuous collector current of 100 mA. The device has a total power dissipation of 200 mW at 25°C, derating at 1.6 mW/°C. Its input resistor ratio is 1:1 (R1 = 22 kΩ, R2 = 22 kΩ), with a DC current gain of 60 to 100 at IC = 5 mA and VCE = 10 V. The transistor is RoHS compliant, Pb-free, and AEC-Q101 qualified. Junction and storage temperature range is -55°C to +150°C.

Datasheet Summary
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DTA124EET1G is a PNP digital transistor with integrated bias resistors, designed to replace discrete transistor-resistor networks and reduce board space. It is packaged in SC-75 (SOT-416) and operates with a maximum collector-emitter voltage of 50 V and a continuous collector current of 100 mA. The device has a total power dissipation of 200 mW at 25°C, derating at 1.6 mW/°C. Its input resistor ratio is 1:1 (R1 = 22 kΩ, R2 = 22 kΩ), with a DC current gain of 60 to 100 at IC = 5 mA and VCE = 10 V. The transistor is RoHS compliant, Pb-free, and AEC-Q101 qualified. Junction and storage temperature range is -55°C to +150°C.

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TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - DTA124EET1G - 917709-DTA124EET1G - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - DTA124EET1G
917709-DTA124EET1G
TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - DTA124EET1G 917709-DTA124EET1G
Manufacturer: ON Semiconductor Win Source Part Number: 917709-DTA124EET1G Features: Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 100 mA 200 mW Surface Mount SC-75, SOT-416 Package: SC-75, SOT-416 Package: Bulk Mounting: Surface Mount Categories: Discrete Semiconductor Products Case / Package: SC-75, SOT-416 Popularity: High Fake Threat In the Open Market: 73 pct. Supply and Demand Status: Balance Quantity per package: 1

Manufacturer: ON Semiconductor
Win Source Part Number: 917709-DTA124EET1G
Features: Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 100 mA 200 mW Surface Mount SC-75, SOT-416
Package: SC-75, SOT-416
Package: Bulk
Mounting: Surface Mount
Categories: Discrete Semiconductor Products
Case / Package: SC-75, SOT-416
Popularity: High
Fake Threat In the Open Market: 73 pct.
Supply and Demand Status: Balance
Quantity per package: 1

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Technical Specifications

  Win Source Electronics
Product Category Bipolar RF Transistors
Product Number 917709-DTA124EET1G
Product Name TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - DTA124EET1G
Polarity PNP
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