Rochester Electronics CA3081F

Description
CA3081 - Small Signal Bipolar Transistor
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Description
CA3081 - Small Signal Bipolar Transistor
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Datasheet
Datasheet Summary
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The CA3081F is a 16-lead ceramic dual-in-line package containing seven high-current silicon NPN transistors in a common emitter configuration, designed for directly driving seven-segment displays, LED displays, relays, and thyristors. Each transistor supports a maximum collector current of 100 mA and a collector-to-emitter voltage of 16 V. The substrate must be grounded to maintain transistor isolation. The device operates from -55°C to 125°C and meets MIL-PRF-38535 Class Q military and Class V space level qualifications. Maximum junction temperature is 175°C for the ceramic package, with a thermal resistance of 115°C/W in free air. The device is qualified under MIL-STD-202 and is manufactured under ISO-9001 and AS9120 quality systems.

Datasheet Summary
Powered by GS/AI

The CA3081F is a 16-lead ceramic dual-in-line package containing seven high-current silicon NPN transistors in a common emitter configuration, designed for directly driving seven-segment displays, LED displays, relays, and thyristors. Each transistor supports a maximum collector current of 100 mA and a collector-to-emitter voltage of 16 V. The substrate must be grounded to maintain transistor isolation. The device operates from -55°C to 125°C and meets MIL-PRF-38535 Class Q military and Class V space level qualifications. Maximum junction temperature is 175°C for the ceramic package, with a thermal resistance of 115°C/W in free air. The device is qualified under MIL-STD-202 and is manufactured under ISO-9001 and AS9120 quality systems.

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 - CA3081F - Rochester Electronics
Newburyport, MA, United States
CA3081 - Small Signal Bipolar Transistor

CA3081 - Small Signal Bipolar Transistor

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Technical Specifications

  Rochester Electronics
Product Category Bipolar RF Transistors
Product Number CA3081F
Package Type CDIP16
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