N-channel 60 V MOSFET designed for high-performance automotive applications, featuring a 6.0 mΩ drain-source on-state resistance at VGS = 10 V and 25 °C, with a continuous drain current of 100 A at 25 °C mounting base temperature and a total power dissipation of 195 W. It is rated for junction temperatures up to 175 °C, meets AEC-Q101 standards, and is housed in an LFPAK56 (SOT669) package. The device supports repetitive avalanche energy up to 127 mJ and features a true standard level gate with VGS(th) > 1 V at 175 °C.
Manufacturer: NXP
Win Source Part Number: 865020-BUK7Y6R0-60EX
Series: TrenchMOS™
Operating Temperature Range: -55°C ~ 175°C (TJ)
Features: N-Channel 60 V 100A (Tc) 195W (Tc) Surface Mount LFPAK56, Power-SO8
Package: Bulk
Package: SC-100, SOT-669
Mounting: Surface Mount
Categories: Discrete Semiconductor Products
Case / Package: LFPAK56, Power-SO8
Popularity: Medium
Fake Threat In the Open Market: 47 pct.
Supply and Demand Status: Limited
Quantity per package: 1
| Win Source Electronics | |
|---|---|
| Product Category | RF Transistors |
| Product Number | 865020-BUK7Y6R0-60EX |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - BUK7Y6R0-60EX |
| Polarity | N-Channel |
