BUK663R7-75C is an N-channel TrenchMOS FET designed for high-performance automotive applications, featuring a 75 V drain-source voltage rating, a continuous drain current of 120 A, and a maximum power dissipation of 306 W. It is packaged in a D2PAK (SOT404) surface-mount package with a maximum junction temperature of 175 °C and is AEC-Q101 compliant for use in demanding environments such as start-stop systems and motor control. The device supports intermediate-level gate drive and has non-repetitive avalanche energy rating of 523 mJ.
Manufacturer: NXP
Win Source Part Number: 865003-BUK663R7-75C,
Series: Automotive, AEC-Q101, TrenchMOS™
Operating Temperature Range: -55°C ~ 175°C (TJ)
Features: N-Channel 75 V 120A (Tc) 306W (Tc) Surface Mount D2PAK
Package: Bulk
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Mounting: Surface Mount
Categories: Discrete Semiconductor Products
Case / Package: D2PAK
ECCN: EAR99
Popularity: Medium
Fake Threat In the Open Market: 81 pct.
Supply and Demand Status: Limited
Quantity per package: 1
MSL Level: 1 (Unlimited)
REACH Status: REACH Affected
| Win Source Electronics | |
|---|---|
| Product Category | Transistors |
| Product Number | 865003-BUK663R7-75C,118 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - BUK663R7-75C,118 |
| Polarity | N-Channel |
