Rochester Electronics TRANSISTORS - Transistors (BJT) - Single - BSP61E6327 BSP61E6327

The BSP61 is a PNP silicon Darlington transistor in an SOT223 package, designed for high-current switching applications with a collector current rating of 1 A and peak collector current of 2 A. It has a collector-emitter voltage rating of 60 V, collector-base voltage of 80 V, and emitter-base voltage of 5 V. The transistor features a low collector-emitter saturation voltage of up to 1.8 V at 1 A collector current and a DC current gain ranging from 2000 to over 10,000 at 500 mA collector current. Total power dissipation is 1.5 W with a junction temperature rating of 150 °C. The device is RoHS compliant and qualified to AEC-Q101. The SOT223 package measures 6.5 mm × 3.5 mm with a 1.6 mm height and has a thermal resistance from junction to soldering point of ≤17 K/W.