Rochester Electronics TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSH205G2215 BSH205G2215

The BSH205G2 is a P-channel enhancement mode MOSFET using Trench technology, housed in a small SOT23 (TO-236AB) surface-mounted package. It is rated for a maximum drain-source voltage of -20 V and a gate-source voltage of ±8 V. The device has a maximum continuous drain current of -2 A at 25 °C ambient temperature and dissipates up to 480 mW when mounted on a standard FR4 PCB. Its on-state resistance is 120 mΩ at -4.5 V gate-source bias and 25 °C junction temperature. The part meets AEC-Q101 qualification standards.