Rochester Electronics TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSD816SNL6327 BSD816SNL6327

The BSD816SN is an N-channel enhancement mode MOSFET designed for low-voltage switching applications, featuring ultra-logic level operation at 1.8 V gate drive. It is packaged in an PG-SOT363 surface-mount case with a continuous drain current rating of 1.4 A at 25 °C and 1.1 A at 70 °C, and an avalanche energy rating of 3.7 mJ. The device has a drain-source on-state resistance of up to 160 mΩ at V_GS = 2.5 V and I_D = 1.4 A, and is qualified to AEC-Q101 with RoHS compliance and halogen-free adherence to IEC61249-2-21. Operating and storage junction temperatures range from -55 °C to 150 °C.