Rochester Electronics TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSD314SPEL6327 BSD314SPEL6327

The BSD314SPE is a P-channel enhancement mode MOSFET designed for low-power switching applications, featuring logic-level gate drive compatibility at 4.5 V. It is packaged in a PG-SOT-363 surface-mount case with a maximum continuous drain current of -1.5 A at 25 °C and a drain-source breakdown voltage of -30 V. The device has a maximum on-state resistance of 140 mΩ at -10 V gate-source voltage and is rated for a junction temperature range of -55 °C to 150 °C. It is ESD protected with a human body model rating of 1000 V to 2000 V, qualified to AEC-Q101, and compliant with RoHS and IEC 61249-2-21 halogen-free standards. Soldering tolerance is up to 260 °C.