Rochester Electronics RF FETs, MOSFETs BLF177

The BLF177 is a silicon N-channel enhancement mode vertical D-MOS transistor designed for industrial and military HF/VHF applications, housed in a 4-lead SOT121B flanged ceramic package with dimensions of 28.45 mm height, 12.86 mm width, and 7.27 mm thickness. It supports a maximum drain-source voltage of 125 V, a continuous drain current of 16 A, and a total power dissipation of 220 W at 25°C. The device features a thermal resistance from junction to mounting base of 0.8 K/W and from mounting base to heatsink of 0.2 K/W. It operates in SSB class-AB at 28 MHz with a peak envelope power of 150 W and power gain exceeding 20 dB, and in CW class-B at 108 MHz with 150 W output. The transistor withstands a load mismatch up to VSWR=50 and meets RoHS requirements. The package has an isolated flange and contains beryllium oxide, requiring proper disposal as chemical waste.