The BDW42 is an NPN Darlington silicon power transistor designed for general purpose and low-speed switching applications. It is packaged in a TO-220AB (Case 221A-09) through-hole case with dimensions of 14.48 to 15.75 mm in length, 9.66 to 10.28 mm in width, and 12.70 to 14.27 mm in lead spacing. The device has a collector-emitter sustaining voltage of 100 Vdc minimum, a collector current rating of 15 Adc, and a total device dissipation of 85 W at 25°C case temperature with a derate of 0.68 W/°C above 25°C. It features a typical DC current gain (hFE) of 2500 at 5.0 Adc and a maximum collector-emitter saturation voltage of 2.0 Vdc at 5.0 Adc. The junction operating temperature ranges from -55°C to 150°C, and it includes built-in base-emitter shunt resistors. The package is available in Pb-free variants, and the device meets AEC-Q200 qualification standards.
Manufacturer: ON Semiconductor
Win Source Part Number: 864122-BDW42
Operating Temperature Range: -55°C ~ 150°C (TJ)
Features: Bipolar (BJT) Transistor NPN - Darlington 100 V 15 A 4MHz 85 W Through Hole TO-220
Package: Tube
Package: TO-220-3
Mounting: Through Hole
Part Status: Obsolete
Categories: Discrete Semiconductor Products
Case / Package: TO-220
ECCN: EAR99
Popularity: Medium
Fake Threat In the Open Market: 35 pct.
Supply and Demand Status: Limited
Quantity per package: 50
HTSUS: 8541.29.0095
| Win Source Electronics | |
|---|---|
| Product Category | Transistors |
| Product Number | 864122-BDW42 |
| Product Name | TRANSISTORS - Transistors (BJT) - Single - BDW42 |
| Polarity | NPN |
