Rochester Electronics TRANSISTORS - Transistors (BJT) - Single - BD441G BD441G

Description
Manufacturer: ON Semiconductor Win Source Part Number: 863972-BD441G Operating Temperature Range: -55°C ~ 150°C (TJ) Features: Bipolar (BJT) Transistor NPN 80 V 4 A 3MHz 36 W Through Hole TO-126 Package: Bulk Package: TO-225AA, TO-126-3 Mounting: Through Hole Categories: Discrete Semiconductor Products Case / Package: TO-126 Popularity: Medium Fake Threat In the Open Market: 76 pct. Supply and Demand Status: Limited Quantity per package: 1
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Description
Manufacturer: ON Semiconductor Win Source Part Number: 863972-BD441G Operating Temperature Range: -55°C ~ 150°C (TJ) Features: Bipolar (BJT) Transistor NPN 80 V 4 A 3MHz 36 W Through Hole TO-126 Package: Bulk Package: TO-225AA, TO-126-3 Mounting: Through Hole Categories: Discrete Semiconductor Products Case / Package: TO-126 Popularity: Medium Fake Threat In the Open Market: 76 pct. Supply and Demand Status: Limited Quantity per package: 1
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Datasheet
Datasheet Summary
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The BD441G is an NPN epitaxial silicon transistor in a TO-126 package, designed for medium power linear and switching applications. It has a collector-emitter voltage rating of 80 V, a continuous collector current of 4 A, and a collector dissipation of 36 W at 25°C. The junction temperature ranges from -65°C to 150°C. The DC current gain ranges from 15 to 130 at 10 mA collector current and 40 to 140 at 500 mA collector current. The collector-emitter saturation voltage is 0.8 V at 2 A collector current and 0.2 A base current. The current gain bandwidth product is 3 MHz. The base-emitter on voltage is 0.58 V at 10 mA collector current and 1.5 V at 2 A collector current.

Datasheet Summary
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The BD441G is an NPN epitaxial silicon transistor in a TO-126 package, designed for medium power linear and switching applications. It has a collector-emitter voltage rating of 80 V, a continuous collector current of 4 A, and a collector dissipation of 36 W at 25°C. The junction temperature ranges from -65°C to 150°C. The DC current gain ranges from 15 to 130 at 10 mA collector current and 40 to 140 at 500 mA collector current. The collector-emitter saturation voltage is 0.8 V at 2 A collector current and 0.2 A base current. The current gain bandwidth product is 3 MHz. The base-emitter on voltage is 0.58 V at 10 mA collector current and 1.5 V at 2 A collector current.

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TRANSISTORS - Transistors (BJT) - Single - BD441G - 863972-BD441G - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - BD441G
863972-BD441G
TRANSISTORS - Transistors (BJT) - Single - BD441G 863972-BD441G
Manufacturer: ON Semiconductor Win Source Part Number: 863972-BD441G Operating Temperature Range: -55°C ~ 150°C (TJ) Features: Bipolar (BJT) Transistor NPN 80 V 4 A 3MHz 36 W Through Hole TO-126 Package: Bulk Package: TO-225AA, TO-126-3 Mounting: Through Hole Categories: Discrete Semiconductor Products Case / Package: TO-126 Popularity: Medium Fake Threat In the Open Market: 76 pct. Supply and Demand Status: Limited Quantity per package: 1

Manufacturer: ON Semiconductor
Win Source Part Number: 863972-BD441G
Operating Temperature Range: -55°C ~ 150°C (TJ)
Features: Bipolar (BJT) Transistor NPN 80 V 4 A 3MHz 36 W Through Hole TO-126
Package: Bulk
Package: TO-225AA, TO-126-3
Mounting: Through Hole
Categories: Discrete Semiconductor Products
Case / Package: TO-126
Popularity: Medium
Fake Threat In the Open Market: 76 pct.
Supply and Demand Status: Limited
Quantity per package: 1

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Technical Specifications

  Win Source Electronics
Product Category Bipolar RF Transistors
Product Number 863972-BD441G
Product Name TRANSISTORS - Transistors (BJT) - Single - BD441G
Polarity NPN
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