Rochester Electronics TRANSISTORS - Transistors (BJT) - Single - BCX70HE6327 BCX70HE6327

BCX70HE6327 is an NPN silicon bipolar transistor in SOT23 package, part of the BCX70 series designed for AF input stages and driver applications. It features a collector-emitter voltage rating of 45 V, collector current of 100 mA, and total power dissipation of 330 mW. The device has a junction temperature limit of 150 °C and meets AEC-Q101 qualification. Current gain (hFE) ranges from 200 to 460 for the H-grade variant at 2 mA collector current. Noise figure is under 2 dB for H-grade at 200 µA, and transition frequency is 250 MHz. Collector-emitter saturation voltage is 0.2 V to 0.55 V depending on bias. The part is RoHS compliant and uses an SOT23 case with dimensions consistent with the standard footprint.