Rochester Electronics TRANSISTORS - Transistors (BJT) - Single - BCX55-10E6327 BCX55-10E6327

BCX55-10 is an NPN silicon bipolar junction transistor for AF driver and output stages, housed in an SOT89 package. It has a collector-emitter voltage rating of 60 V, a collector current capacity of 1 A, and a maximum power dissipation of 1 W at 130 °C. The transistor exhibits a DC current gain (hFE) between 100 and 160 at a collector current of 150 mA and collector-emitter voltage of 2 V. Collector-emitter saturation voltage is specified at a maximum of 0.5 V with 500 mA collector current and 50 mA base current. The transition frequency is 100 MHz. It operates with a junction temperature range of -65 °C to 150 °C and complies with thermal resistance of 20 K/W from junction to soldering point.