Rochester Electronics TRANSISTORS - Transistors (BJT) - Single - BCR35PNH6433 BCR35PNH6433

The BCR35PN is a dual integrated NPN/PNP silicon digital transistor array in a SOT-363 package, designed for switching, inverter, interface, and driver circuits. It features built-in bias resistors of 10 kΩ and 47 kΩ for the NPN and PNP transistors respectively. The device supports a maximum collector-emitter voltage of 50 V, a collector current of 100 mA, and a total power dissipation of 250 mW at a case temperature of 115 °C. Junction temperature operates up to 150 °C with a thermal resistance from junction to solder point of ≤140 K/W. The package is Pb-free and compliant with RoHS. It is qualified according to AEC-Q101.