Rochester Electronics TRANSISTORS - Transistors (BJT) - Single - BCR158 BCR158

BCR158 is a PNP silicon digital transistor with built-in bias resistors (R1 = 2.2 kΩ, R2 = 47 kΩ) designed for switching, inverter, and driver circuits. It is packaged in SOT23 and rated for a maximum collector-emitter voltage of 50 V, collector current of 100 mA, and total power dissipation of 200 mW at a substrate temperature of 102°C. The junction temperature ranges from -65°C to 150°C, and the device is qualify according to AEC-Q101. It is RoHS compliant and features a collector-emitter saturation voltage of up to 0.3 V at IC = 10 mA and IB = 0.5 mA. The transition frequency is 200 MHz at IC = 10 mA and VCE = 5 V.