Rochester Electronics TRANSISTORS - Transistors (BJT) - Single - BC858BDW1T1 BC858BDW1T1

Description
Manufacturer: ON Semiconductor Win Source Part Number: 863654-BC858BDW1T1 Series: * Features: Bipolar (BJT) Transistor Package: Bulk Categories: Discrete Semiconductor Products ECCN: EAR99 Popularity: Medium Fake Threat In the Open Market: 43 pct. Supply and Demand Status: Limited Quantity per package: 3000 MSL Level: 1 (Unlimited) REACH Status: REACH Affected HTSUS: 8541.21.0075
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Description
Manufacturer: ON Semiconductor Win Source Part Number: 863654-BC858BDW1T1 Series: * Features: Bipolar (BJT) Transistor Package: Bulk Categories: Discrete Semiconductor Products ECCN: EAR99 Popularity: Medium Fake Threat In the Open Market: 43 pct. Supply and Demand Status: Limited Quantity per package: 3000 MSL Level: 1 (Unlimited) REACH Status: REACH Affected HTSUS: 8541.21.0075
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Datasheet
Datasheet Summary
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The BC858BDW1T1 is a PNP dual transistor in a SOT-363/SC-88 package, designed for general purpose amplifier applications in low power surface mount circuits. It has a collector-emitter voltage rating of -30 V, a collector-base voltage of -30 V, an emitter-base voltage of -5.0 V, and a continuous collector current of -100 mA. The device dissipates up to 380 mW with a thermal resistance of 328 °C/W and operates from -55 °C to +150 °C. DC current gain ranges from 220 to 475 at IC = -2.0 mA and VCE = -5.0 V. The current-gain-bandwidth product is 100 MHz, and the output capacitance is 4.5 pF. The part meets RoHS standards and is shipped in 3000-unit reels.

Datasheet Summary
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The BC858BDW1T1 is a PNP dual transistor in a SOT-363/SC-88 package, designed for general purpose amplifier applications in low power surface mount circuits. It has a collector-emitter voltage rating of -30 V, a collector-base voltage of -30 V, an emitter-base voltage of -5.0 V, and a continuous collector current of -100 mA. The device dissipates up to 380 mW with a thermal resistance of 328 °C/W and operates from -55 °C to +150 °C. DC current gain ranges from 220 to 475 at IC = -2.0 mA and VCE = -5.0 V. The current-gain-bandwidth product is 100 MHz, and the output capacitance is 4.5 pF. The part meets RoHS standards and is shipped in 3000-unit reels.

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TRANSISTORS - Transistors (BJT) - Single - BC858BDW1T1 - 863654-BC858BDW1T1 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - BC858BDW1T1
863654-BC858BDW1T1
TRANSISTORS - Transistors (BJT) - Single - BC858BDW1T1 863654-BC858BDW1T1
Manufacturer: ON Semiconductor Win Source Part Number: 863654-BC858BDW1T1 Series: * Features: Bipolar (BJT) Transistor Package: Bulk Categories: Discrete Semiconductor Products ECCN: EAR99 Popularity: Medium Fake Threat In the Open Market: 43 pct. Supply and Demand Status: Limited Quantity per package: 3000 MSL Level: 1 (Unlimited) REACH Status: REACH Affected HTSUS: 8541.21.0075

Manufacturer: ON Semiconductor
Win Source Part Number: 863654-BC858BDW1T1
Series: *
Features: Bipolar (BJT) Transistor
Package: Bulk
Categories: Discrete Semiconductor Products
ECCN: EAR99
Popularity: Medium
Fake Threat In the Open Market: 43 pct.
Supply and Demand Status: Limited
Quantity per package: 3000
MSL Level: 1 (Unlimited)
REACH Status: REACH Affected
HTSUS: 8541.21.0075

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Technical Specifications

  Win Source Electronics
Product Category Bipolar RF Transistors
Product Number 863654-BC858BDW1T1
Product Name TRANSISTORS - Transistors (BJT) - Single - BC858BDW1T1
Package Type SOT3
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