Rochester Electronics TRANSISTORS - Transistors (BJT) - Single - BC848BPDW1T1 BC848BPDW1T1

The BC848BPDW1T1 is a dual NPN/PNP bipolar junction transistor pair designed for general purpose amplifier applications in low power surface mount circuits. It is housed in the SOT-363/SC-88 package, measuring 2.0 mm x 1.25 mm x 0.95 mm. The device has a collector-emitter voltage rating of 30 V, a collector current rating of 100 mA, and a total device dissipation of 380 mW at 25°C, derating at 3.0 mW/°C above that temperature. Thermal resistance from junction to ambient is 328 °C/W. Junction and storage temperature range is -55°C to +150°C. The DC current gain (hFE) ranges from 200 to 475 at IC = 2.0 mA and VCE = 5.0 V. The current gain-bandwidth product is 100 MHz. The part is shipped in 3000-unit reels.