Rochester Electronics TRANSISTORS - Transistors (BJT) - Single - BC847CWE6778 BC847CWE6778

BC847C is an NPN silicon bipolar junction transistor for audio frequency input stages and driver applications, available in the SOT323 package. It has a collector-emitter voltage rating of 30 V, a collector current of 100 mA, and a total power dissipation of 250 mW at 124 °C. The DC current gain (hFE) ranges from 420 to 800 at 2 mA collector current. The transistor exhibits a collector-emitter saturation voltage of up to 600 mV at 100 mA collector current and 5 mA base current. It includes low noise performance with a noise figure of up to 4 dB at 200 µA collector current and a transition frequency of 250 MHz. The device is RoHS compliant and meets AEC-Q101 qualifications except for the BC847BL3 variant. The SOT323 package has dimensions consistent with standard surface-mount layouts for 3-pin configurations.