NPN general-purpose transistor in a small SOT23 (TO-236AB) surface-mount package, rated for 45 V collector-emitter voltage and 500 mA continuous collector current, with a DC current gain range of 160 to 400 at I_C = 100 mA and V_CE = 1 V. Peak collector current is 1 A for pulses up to 1 ms. Total power dissipation is 250 mW on a standard footprint, or 345 mW with a 1 cm² collector pad. Junction temperature range is -65 °C to 150 °C. Complies with IEC 60134 limiting values.
Manufacturer: NXP
Win Source Part Number: 863609-BC817-25/DG/B
Series: *
Features: Bipolar (BJT) Transistor
Package: Bulk
Categories: Discrete Semiconductor Products
ECCN: EAR99
Popularity: Medium
Fake Threat In the Open Market: 59 pct.
Supply and Demand Status: Limited
Quantity per package: 3000
MSL Level: 1 (Unlimited)
REACH Status: Vendor Undefined
HTSUS: 8541.21.0075
| Win Source Electronics | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | 863609-BC817-25/DG/B4215 |
| Product Name | TRANSISTORS - Transistors (BJT) - Single - BC817-25/DG/B4215 |
| Package Type | SOT3 |