Rochester Electronics TRANSISTORS - Transistors (BJT) - Single - BC638 BC638

The BC638 is a PNP silicon bipolar junction transistor designed for high current applications, housed in a TO-92 (TO-226) package measuring 4.45 to 5.20 mm in length, 4.32 to 5.33 mm in width, and 3.18 to 4.19 mm in thickness. It has a collector-emitter voltage rating of -60 V, a collector current limit of -0.5 A, and a total device dissipation of 625 mW at 25°C ambient temperature, derating at 5.0 mW/°C. The junction temperature ranges from -55°C to +150°C. The device has a DC current gain (hFE) of 40 to 160 at -150 mA collector current and -2 V collector-emitter voltage, a collector-emitter saturation voltage of -0.25 V to -0.5 V at -500 mA collector current and -50 mA base current, and a current gain-bandwidth product of 150 MHz. Thermal resistance from junction to ambient is 200°C/W and from junction to case is 83.3°C/W.