Rochester Electronics TRANSISTORS - Transistors (BJT) - Single - BC556BTFR BC556BTFR

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 863588-BC556BTFR Operating Temperature Range: 150°C (TJ) Features: Bipolar (BJT) Transistor PNP 65 V 100 mA 150MHz 500 mW Through Hole TO-92-3 Package: Bulk Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Mounting: Through Hole Categories: Discrete Semiconductor Products Case / Package: TO-92-3 Popularity: Medium Fake Threat In the Open Market: 55 pct. Supply and Demand Status: Limited Quantity per package: 1
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Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 863588-BC556BTFR Operating Temperature Range: 150°C (TJ) Features: Bipolar (BJT) Transistor PNP 65 V 100 mA 150MHz 500 mW Through Hole TO-92-3 Package: Bulk Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Mounting: Through Hole Categories: Discrete Semiconductor Products Case / Package: TO-92-3 Popularity: Medium Fake Threat In the Open Market: 55 pct. Supply and Demand Status: Limited Quantity per package: 1
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Datasheet
Datasheet Summary
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The BC556BTFR is a PNP epitaxial silicon transistor in a TO-92-3 package with formed leads, designed for switching and amplification applications. It has a collector-base voltage rating of -65 V, a collector-emitter voltage rating of -45 V, and a maximum collector current of -100 mA. The device dissipates up to 500 mW with a thermal resistance of 250 °C/W and operates with a junction temperature up to 150 °C. It features a current gain bandwidth product of 150 MHz and a collector-emitter saturation voltage of up to -650 mV at -100 mA collector current and -5 mA base current. The TO-92-3 package complies with JEDEC TO-92 standards. The part is packaged in tape and reel.

Datasheet Summary
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The BC556BTFR is a PNP epitaxial silicon transistor in a TO-92-3 package with formed leads, designed for switching and amplification applications. It has a collector-base voltage rating of -65 V, a collector-emitter voltage rating of -45 V, and a maximum collector current of -100 mA. The device dissipates up to 500 mW with a thermal resistance of 250 °C/W and operates with a junction temperature up to 150 °C. It features a current gain bandwidth product of 150 MHz and a collector-emitter saturation voltage of up to -650 mV at -100 mA collector current and -5 mA base current. The TO-92-3 package complies with JEDEC TO-92 standards. The part is packaged in tape and reel.

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TRANSISTORS - Transistors (BJT) - Single - BC556BTFR - 863588-BC556BTFR - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - BC556BTFR
863588-BC556BTFR
TRANSISTORS - Transistors (BJT) - Single - BC556BTFR 863588-BC556BTFR
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 863588-BC556BTFR Operating Temperature Range: 150°C (TJ) Features: Bipolar (BJT) Transistor PNP 65 V 100 mA 150MHz 500 mW Through Hole TO-92-3 Package: Bulk Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Mounting: Through Hole Categories: Discrete Semiconductor Products Case / Package: TO-92-3 Popularity: Medium Fake Threat In the Open Market: 55 pct. Supply and Demand Status: Limited Quantity per package: 1

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 863588-BC556BTFR
Operating Temperature Range: 150°C (TJ)
Features: Bipolar (BJT) Transistor PNP 65 V 100 mA 150MHz 500 mW Through Hole TO-92-3
Package: Bulk
Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Mounting: Through Hole
Categories: Discrete Semiconductor Products
Case / Package: TO-92-3
Popularity: Medium
Fake Threat In the Open Market: 55 pct.
Supply and Demand Status: Limited
Quantity per package: 1

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Technical Specifications

  Win Source Electronics
Product Category Bipolar RF Transistors
Product Number 863588-BC556BTFR
Product Name TRANSISTORS - Transistors (BJT) - Single - BC556BTFR
Polarity PNP
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