The BC33725BU is an NPN epitaxial silicon transistor in a TO-92-3 package, suitable for switching and amplifier applications. It has a collector-emitter voltage rating of 45 V, a continuous collector current of 800 mA, and a power dissipation of 625 mW. The device operates with a junction temperature up to 150 °C and has a thermal resistance of 200 °C/W. Current gain (hFE) ranges from 160 to 400 at IC = 100 mA, with a collector-emitter saturation voltage of 0.7 V at IC = 500 mA and IB = 50 mA. It meets the TO-92 JEDEC standard and is packaged in bulk.
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 863574-BC33725BU
Operating Temperature Range: 150°C (TJ)
Features: Bipolar (BJT) Transistor NPN 45 V 800 mA 100MHz 625 mW Through Hole TO-92-3
Package: Bulk
Package: TO-226-3, TO-92-3 (TO-226AA)
Mounting: Through Hole
Categories: Discrete Semiconductor Products
Case / Package: TO-92-3
Popularity: Medium
Fake Threat In the Open Market: 76 pct.
Supply and Demand Status: Limited
Quantity per package: 1
| Win Source Electronics | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | 863574-BC33725BU |
| Product Name | TRANSISTORS - Transistors (BJT) - Single - BC33725BU |
| Polarity | NPN |
