Rochester Electronics TRANSISTORS - Transistors (BJT) - Single - BC337 BC337

The BC337 is an NPN silicon bipolar junction transistor designed for general-purpose amplification, housed in a TO-92 package with dimensions of 4.45 to 5.20 mm in height, 4.32 to 5.33 mm in width, and 12.70 mm in lead length. It has a collector-emitter voltage rating of 45 V, a continuous collector current of 800 mA, and a total device dissipation of 625 mW at 25°C ambient temperature. The DC current gain (hFE) ranges from 100 to 630 at 100 mA collector current and 1 V collector-emitter voltage. The device operates over a junction temperature range of -55°C to +150°C and meets RoHS compliance for Pb-free packaging.