Rochester Electronics TRANSISTORS - Transistors (BJT) - Single - BC327 BC327

The BC327 is a PNP silicon bipolar junction transistor for amplification applications, housed in a TO-92 case with dimensions of 4.45 to 5.20 mm in diameter and 12.70 mm in length. It has a collector-emitter voltage rating of -45 V, a continuous collector current of -800 mA, and a total power dissipation of 625 mW at 25°C. The device operates over a junction temperature range of -55°C to +150°C and has a thermal resistance from junction to ambient of 200°C/W. The DC current gain (hFE) ranges from 100 to 630 at a collector current of -100 mA and a collector-emitter voltage of -1.0 V. The base-emitter on voltage is up to -1.2 V at -300 mA collector current. The transistor is available in bulk packaging with 5000 units per package.