Rochester Electronics TRANSISTORS - Transistors (BJT) - Single - BC307B BC307B

The BC307B is a PNP silicon bipolar junction transistor for amplification, housed in a TO-92-3 package measuring up to 5.20 mm in body length, 5.33 mm in width, and 12.70 mm in lead spacing. It has a collector-emitter voltage rating of -45 V, a continuous collector current of -100 mA, and a total device dissipation of 350 mW at 25°C. Thermal resistance from junction to ambient is 357 °C/W. The device has a DC current gain (hFE) range of 200 to 460 at IC = -2.0 mA and VCE = -5.0 V, and collector-emitter saturation voltage of -0.25 V maximum at IC = -100 mA and IB = -5 mA. Operating and storage junction temperature range is -55 to +150 °C.