Rochester Electronics TRANSISTORS - Transistors (BJT) - Single - 30A01C-TB-E 30A01C-TB-E

The 30A01C is a PNP silicon epitaxial planar transistor designed for low-frequency power amplification and muting circuits. It is housed in a CP package measuring 5.0 mm × 5.1 mm × 1.9 mm with a 3-pin configuration. The device has a collector-to-emitter voltage rating of 30 V, a continuous collector current of 300 mA, and a power dissipation of 300 mW when mounted on a 20 × 30 × 1.6 mm glass epoxy board. The collector-to-emitter saturation voltage is typically 110 mV at IC = -100 mA and IB = -5 mA. The DC current gain (hFE) ranges from 200 to 500 at VCE = -2 V and IC = -10 mA. The junction temperature rating is 150 °C, and the storage temperature range is -55 °C to +150 °C. The part meets RoHS compliance and is qualified under AEC-Q200.