Rochester Electronics TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SK3991-ZK-E1-AZ 2SK3991-ZK-E1-AZ

Description
Manufacturer: Renesas Electronics America Win Source Part Number: 906463-2SK3991-ZK-E1 -AZ Series: * Package: Bulk Categories: Discrete Semiconductor Products ECCN: EAR99 Popularity: High Fake Threat In the Open Market: 58 pct. Supply and Demand Status: Balance Quantity per package: 2500 MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095
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Description
Manufacturer: Renesas Electronics America Win Source Part Number: 906463-2SK3991-ZK-E1 -AZ Series: * Package: Bulk Categories: Discrete Semiconductor Products ECCN: EAR99 Popularity: High Fake Threat In the Open Market: 58 pct. Supply and Demand Status: Balance Quantity per package: 2500 MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095
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Datasheet
Datasheet Summary
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The 2SK3991-ZK is an N-channel power MOSFET in a TO-252 (MP-3ZK) package, designed for low-voltage, high-current switching applications such as synchronous rectifier DC/DC converters. It has a maximum drain-to-source voltage of 25 V, a continuous drain current of ±30 A, and a maximum on-state resistance of 13.0 mΩ at VGS = 10 V and ID = 15 A. The device supports 5 V gate drive and features a total gate charge of 17 nC. The package dimensions are 6.5 mm × 6.6 mm with a 2.3 mm thick body and a drain tab as a heat sink. It meets the 'Standard' quality grade per Renesas Electronics classification. The part is rated for a channel temperature of 150°C and storage temperature from −55°C to +150°C.

Datasheet Summary
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The 2SK3991-ZK is an N-channel power MOSFET in a TO-252 (MP-3ZK) package, designed for low-voltage, high-current switching applications such as synchronous rectifier DC/DC converters. It has a maximum drain-to-source voltage of 25 V, a continuous drain current of ±30 A, and a maximum on-state resistance of 13.0 mΩ at VGS = 10 V and ID = 15 A. The device supports 5 V gate drive and features a total gate charge of 17 nC. The package dimensions are 6.5 mm × 6.6 mm with a 2.3 mm thick body and a drain tab as a heat sink. It meets the 'Standard' quality grade per Renesas Electronics classification. The part is rated for a channel temperature of 150°C and storage temperature from −55°C to +150°C.

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TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SK3991-ZK-E1-AZ - 906463-2SK3991-ZK-E1-AZ - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SK3991-ZK-E1-AZ
906463-2SK3991-ZK-E1-AZ
TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SK3991-ZK-E1-AZ 906463-2SK3991-ZK-E1-AZ
Manufacturer: Renesas Electronics America Win Source Part Number: 906463-2SK3991-ZK-E1 -AZ Series: * Package: Bulk Categories: Discrete Semiconductor Products ECCN: EAR99 Popularity: High Fake Threat In the Open Market: 58 pct. Supply and Demand Status: Balance Quantity per package: 2500 MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095

Manufacturer: Renesas Electronics America
Win Source Part Number: 906463-2SK3991-ZK-E1-AZ
Series: *
Package: Bulk
Categories: Discrete Semiconductor Products
ECCN: EAR99
Popularity: High
Fake Threat In the Open Market: 58 pct.
Supply and Demand Status: Balance
Quantity per package: 2500
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095

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Technical Specifications

  Win Source Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 906463-2SK3991-ZK-E1-AZ
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SK3991-ZK-E1-AZ
Package Type SOT3
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