Rochester Electronics TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SK2617ALS 2SK2617ALS

The 2SK2617ALS is an N-channel silicon MOSFET designed for general-purpose switching applications. It is packaged in a TO-220FI(LS) case with dimensions of 6.3 mm × 5.3 mm × 2.7 mm. The device has a drain-to-source voltage rating of 500 V, a continuous drain current of 4.5 A at Tc=25°C, and a pulsed drain current of 16 A. Its maximum power dissipation is 25 W at Tc=25°C. The static drain-to-source on-state resistance is 1.2 to 1.6 Ω at ID=2A and VGS=15V. The total gate charge is 15 nC, and switching times include a rise time of 15 ns and a fall time of 25 ns. The device meets the avalanche energy rating of 88 mJ and operates within a junction temperature range of -55°C to 150°C. It is intended for standard industrial, consumer, and office equipment applications, not for life-sustaining or safety-critical systems.