Rochester Electronics TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SK1657-T1B-A 2SK1657-T1B-A

The 2SK1657 is an N-channel MOSFET designed for switching applications and can be driven by a 2.5 V power supply. It is packaged in an SC-59 (Mini Mold) format with dimensions of 2.8 mm × 1.5 mm × 1.1 mm. The device features a drain-source voltage rating of 30 V, a continuous drain current of ±100 mA, and a total power dissipation of 200 mW. It exhibits low gate leakage current of ±5 nA maximum at ±3.0 V gate-source voltage and an on-state resistance of 25 Ω at VGS = 2.5 V and ID = 10 mA. The MOSFET includes an integrated gate-source ESD protection diode. It is classified as a Standard quality grade product and complies with RoHS, but does not meet AEC-Q200 or other automotive or safety qualifications.