Rochester Electronics TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SK1215IGETL-E 2SK1215IGETL-E

The 2SK1215 is a silicon N-channel MOS FET for VHF amplification, in a CMPAK package (1.8 mm × 1.25 mm, 0.006 g). It has a 20 V drain-to-source voltage rating, ±5 V gate-to-source voltage limit, and 30 mA maximum drain current. Channel power dissipation is 100 mW at 150°C maximum junction temperature. Forward transfer admittance ranges from 8 to 14 mS, input capacitance is 2.5 pF, output capacitance is 1.6 pF, and noise figure is up to 3 dB at 100 MHz. The IGETL suffix denotes grade E (I_DSS: 6 to 10 mA) in 8 mm embossed tape on a 178 mm reel. The device complies with RoHS and is qualified as 'Standard' quality.