Rochester Electronics TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SK1133-T2B-A 2SK1133-T2B-A

Description
Manufacturer: Renesas Electronics America Win Source Part Number: 906425-2SK1133-T2B-A Series: * Package: Bulk Categories: Discrete Semiconductor Products ECCN: EAR99 Popularity: High Fake Threat In the Open Market: 52 pct. Supply and Demand Status: Balance Quantity per package: 3000 MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.21.0095
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Description
Manufacturer: Renesas Electronics America Win Source Part Number: 906425-2SK1133-T2B-A Series: * Package: Bulk Categories: Discrete Semiconductor Products ECCN: EAR99 Popularity: High Fake Threat In the Open Market: 52 pct. Supply and Demand Status: Balance Quantity per package: 3000 MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.21.0095
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Datasheet
Datasheet Summary
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The 2SK1133 is an N-channel MOSFET designed for high-speed switching applications and directly drivable by 5 V ICs. It is packaged in an SC-59 (Mini Mold) case with dimensions of 2.8 mm × 1.5 mm × 1.0 mm. The device has a drain-to-source voltage rating of 50 V, a continuous drain current of ±100 mA, and a total power dissipation of 200 mW. It features high input impedance, eliminating the need for a bias resistor, and can be used complementarily with the 2SJ166. The part meets the Standard quality grade classification per Renesas Electronics' product grading system and is RoHS compliant. Switching times include a rise time of 25 ns and a fall time of 35 ns under specified test conditions.

Datasheet Summary
Powered by GS/AI

The 2SK1133 is an N-channel MOSFET designed for high-speed switching applications and directly drivable by 5 V ICs. It is packaged in an SC-59 (Mini Mold) case with dimensions of 2.8 mm × 1.5 mm × 1.0 mm. The device has a drain-to-source voltage rating of 50 V, a continuous drain current of ±100 mA, and a total power dissipation of 200 mW. It features high input impedance, eliminating the need for a bias resistor, and can be used complementarily with the 2SJ166. The part meets the Standard quality grade classification per Renesas Electronics' product grading system and is RoHS compliant. Switching times include a rise time of 25 ns and a fall time of 35 ns under specified test conditions.

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TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SK1133-T2B-A - 906425-2SK1133-T2B-A - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SK1133-T2B-A
906425-2SK1133-T2B-A
TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SK1133-T2B-A 906425-2SK1133-T2B-A
Manufacturer: Renesas Electronics America Win Source Part Number: 906425-2SK1133-T2B-A Series: * Package: Bulk Categories: Discrete Semiconductor Products ECCN: EAR99 Popularity: High Fake Threat In the Open Market: 52 pct. Supply and Demand Status: Balance Quantity per package: 3000 MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.21.0095

Manufacturer: Renesas Electronics America
Win Source Part Number: 906425-2SK1133-T2B-A
Series: *
Package: Bulk
Categories: Discrete Semiconductor Products
ECCN: EAR99
Popularity: High
Fake Threat In the Open Market: 52 pct.
Supply and Demand Status: Balance
Quantity per package: 3000
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.21.0095

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Technical Specifications

  Win Source Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 906425-2SK1133-T2B-A
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SK1133-T2B-A
Package Type SOT3
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