Rochester Electronics TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SJ654 2SJ654

The 2SJ654 is a P-channel silicon MOSFET designed for DC/DC converter applications. It is packaged in a TO-220ML case with dimensions of 2063A. The device has a drain-to-source voltage rating of -100 V, a continuous drain current of -8 A, and a pulse drain current of -32 A. The maximum allowable power dissipation at Tc=25°C is 20 W. It features low ON-resistance with RDS(on) of 240 mΩ at -10 V gate drive and 320 mΩ at -4 V gate drive. The gate-to-source voltage rating is -20 V, and the channel and storage temperature range is -55°C to +150°C. The device is qualified to SANYO's specifications for switching performance and thermal stability.