Rochester Electronics TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SJ317NYTR-E 2SJ317NYTR-E

Description
Manufacturer: Renesas Electronics America Win Source Part Number: 855342-2SJ317NYTR-E Series: * Package: Bulk Part Status: Obsolete Categories: Discrete Semiconductor Products ECCN: EAR99 Popularity: Medium Fake Threat In the Open Market: 42 pct. Supply and Demand Status: Limited Quantity per package: 1000 MSL Level: 1 (Unlimited) REACH Status: Vendor Undefined HTSUS: 8541.29.0095
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Description
Manufacturer: Renesas Electronics America Win Source Part Number: 855342-2SJ317NYTR-E Series: * Package: Bulk Part Status: Obsolete Categories: Discrete Semiconductor Products ECCN: EAR99 Popularity: Medium Fake Threat In the Open Market: 42 pct. Supply and Demand Status: Limited Quantity per package: 1000 MSL Level: 1 (Unlimited) REACH Status: Vendor Undefined HTSUS: 8541.29.0095
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Datasheet
Datasheet Summary
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The 2SJ317 is a silicon P-channel MOS FET designed for high-speed power switching applications such as camera or VTR motor drive circuits, power switches, and solenoid drives. It features very low on-resistance and is packaged in the UPAK (PLZZ0004CA-A) case, measuring 4.5 mm × 1.5 mm with a maximum height of 1.8 mm and a mass of 0.050 g. The part is supplied in 1000-piece tape reels, as indicated by the 'TR-E' suffix in the ordering code. The device is classified as 'Standard' quality and is not intended for life-critical or safety-related applications.

Datasheet Summary
Powered by GS/AI

The 2SJ317 is a silicon P-channel MOS FET designed for high-speed power switching applications such as camera or VTR motor drive circuits, power switches, and solenoid drives. It features very low on-resistance and is packaged in the UPAK (PLZZ0004CA-A) case, measuring 4.5 mm × 1.5 mm with a maximum height of 1.8 mm and a mass of 0.050 g. The part is supplied in 1000-piece tape reels, as indicated by the 'TR-E' suffix in the ordering code. The device is classified as 'Standard' quality and is not intended for life-critical or safety-related applications.

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TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SJ317NYTR-E - 855342-2SJ317NYTR-E - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SJ317NYTR-E
855342-2SJ317NYTR-E
TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SJ317NYTR-E 855342-2SJ317NYTR-E
Manufacturer: Renesas Electronics America Win Source Part Number: 855342-2SJ317NYTR-E Series: * Package: Bulk Part Status: Obsolete Categories: Discrete Semiconductor Products ECCN: EAR99 Popularity: Medium Fake Threat In the Open Market: 42 pct. Supply and Demand Status: Limited Quantity per package: 1000 MSL Level: 1 (Unlimited) REACH Status: Vendor Undefined HTSUS: 8541.29.0095

Manufacturer: Renesas Electronics America
Win Source Part Number: 855342-2SJ317NYTR-E
Series: *
Package: Bulk
Part Status: Obsolete
Categories: Discrete Semiconductor Products
ECCN: EAR99
Popularity: Medium
Fake Threat In the Open Market: 42 pct.
Supply and Demand Status: Limited
Quantity per package: 1000
MSL Level: 1 (Unlimited)
REACH Status: Vendor Undefined
HTSUS: 8541.29.0095

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Technical Specifications

  Win Source Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 855342-2SJ317NYTR-E
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SJ317NYTR-E
Package Type SOT3
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