Rochester Electronics TRANSISTORS - Transistors (BJT) - Single - 2SD863F-AE 2SD863F-AE

The 2SD863F-AE is a PNP silicon transistor from the 2SB764/2SD863 series, designed for voltage regulation and relay lamp driver applications. It is housed in a 3-pin package with dimensions of 6.0 mm × 5.0 mm × 0.5 mm. The device offers a collector-to-emitter voltage rating of 50 V, a collector current of 1 A, and a collector dissipation of 0.9 W. The junction temperature ranges up to 150 °C. The hFE gain for the F-rank variant is specified between 160 and 320 at VCE = −2 V and IC = −50 mA. The gain-bandwidth product is 150 MHz, with an output capacitance of 12 pF. The device complies with industrial application standards but is not intended for life-support or high-reliability systems.